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IPD25N06S4L-30

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IPD25N06S4L-30

Product Category : MOSFET

Id - Continuous Drain Current : 25 A

Pd - Power Dissipation : 29 W

Vds - Drain-Source Breakdown Voltage : 60 V

Packaging : Tape & Reel (TR)

Vgs th - Gate-Source Threshold Voltage : 1.2 V

Package : TO-252

Rds On - Drain-Source Resistance : 23 mOhms

RoHS : Green available

Factory Pack Quantity : 2500

Vgs - Gate-Source Voltage : - 16 V, + 16 V

Qg - Gate Charge : 16.3 nC

Manufacturer : Infineon Technologies

Description : MOSFET N-Ch 60V 25A DPAK-2 OptiMOS-T2

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The IPD25N06S4L-30,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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