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IPD35N10S3L-26

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IPD35N10S3L-26

Transistor Polarity : N-Channel

Technology : Si

Id - Continuous Drain Current : 35 A

Mounting Style : SMD/SMT

Tradename : OptiMOS

Minimum Operating Temperature : - 55 C

Package / Case : TO-252-3

Maximum Operating Temperature : + 175 C

Channel Mode : Enhancement

Vds - Drain-Source Breakdown Voltage : 100 V

Packaging : Reel

Vgs th - Gate-Source Threshold Voltage : 1.2 V

Product Category : MOSFET

Rds On - Drain-Source Resistance : 20 mOhms

Number of Channels : 1 Channel

Vgs - Gate-Source Voltage : 20 V

Qg - Gate Charge : 39 nC

Manufacturer : Infineon Technologies

Description : MOSFET N-Ch 100V 35A DPAK-2 OptiMOS-T

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The IPD35N10S3L-26,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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